Features: SpecificationsDescriptionATT1800AT1 is an optically coupled,photovoltaic generator with intergrated switching speed enhancement circuitry.It is constructed by using a GaAIAs LED for actuation control and a monolithic output control die containing a photodiode array (PDA),high speed turn-...
ATT1800AT1: Features: SpecificationsDescriptionATT1800AT1 is an optically coupled,photovoltaic generator with intergrated switching speed enhancement circuitry.It is constructed by using a GaAIAs LED for actuat...
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Features: SpecificationsDescriptionThe ATT1700A Series Serial ROM family consists of one-time prog...
ATT1800AT1 is an optically coupled,photovoltaic generator with intergrated switching speed enhancement circuitry.It is constructed by using a GaAIAs LED for actuation control and a monolithic output control die containing a photodiode array (PDA),high speed turn-on/off circuitry and a robust ESD protection zener diode.
There are some ATT1800AT1 features as follows.First is fast turn on.The second is fast turn off.Then is rise times typically 500 ns.Next is fall times typically 300 ns.The fifth is 3750 Vrms I/O isolation voltage.The sixth is zener diode protection for external MOSFET.The last one is high output breakdown voltage (300 V).The typical applications include high speed solid-state relays,switch mode power supplies,DC motor control,industrial controls,ATE and isolated switching.
What comes next is about the ATT1800AT1 absolute maximum ratings (at 25 unless otherwise specified).The TA (ambient operating temperature range) is from -55 to +100.The Tstg (storage temperature range) is from -55 to +150.The TS (pin soldering temperature (t=10 s max)) is 260.The VISO (input/output isolation voltage) is 3750 Vrms.The Rins (insulation resistance) is >10 G at VISO=500 V,TA=25 and is >0.1 G at VISO=500 V,TA=100.Then is about the LED input ratings.The VR (reverse voltage (IR<10A)) is 6 V.The IF (continuous forward current) is 60 mA.The IFpeak (peak forward current) is 600 mA.The PDISS (power dissipation) is 100 mW.Next is about the MOSFET driver output ratings.The VB (bias voltage (pin 5 to 6)) is 300 V.The leakage current (pin 5 to 6) is 200 nA at VR=100 V.The peak input current (pin 5 to 4) is 50 mA.The PDISS (power dissipation) is 150 mW.