ATP202-TL-H

MOSFET N-CH 30V 50A ATPAK

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SeekIC No. : 003430322 Detail

ATP202-TL-H: MOSFET N-CH 30V 50A ATPAK

floor Price/Ceiling Price

US $ .21~.52 / Piece | Get Latest Price
Part Number:
ATP202-TL-H
Mfg:
Supply Ability:
5000

Price Break

  • Qty
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  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.52
  • $.45
  • $.4
  • $.35
  • $.3
  • $.26
  • $.21
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: - Manufacturer: ON Semiconductor
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 27nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1650pF @ 10V
Power - Max: 40W Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab) Supplier Device Package: ATPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 50A
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: -
Power - Max: 40W
Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
Manufacturer: ON Semiconductor
Package / Case: ATPAK (2 leads+tab)
Supplier Device Package: ATPAK
Input Capacitance (Ciss) @ Vds: 1650pF @ 10V


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