Features: • Available in Gate Array or Embedded Array• High-speed, 100 ps Gate Delay, 2-input NAND, FO = 2 (nominal)• Up to 6.9 Million Used Gates and 976 Pins• 0.25µ Geometry in up to Five-level Metal• System-level Integration Technology Cores: ARM7TDMI™,...
ATL120: Features: • Available in Gate Array or Embedded Array• High-speed, 100 ps Gate Delay, 2-input NAND, FO = 2 (nominal)• Up to 6.9 Million Used Gates and 976 Pins• 0.25µ G...
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• Available in Gate Array or Embedded Array
• High-speed, 100 ps Gate Delay, 2-input NAND, FO = 2 (nominal)
• Up to 6.9 Million Used Gates and 976 Pins
• 0.25µ Geometry in up to Five-level Metal
• System-level Integration Technology Cores: ARM7TDMI™, ARM920T™, ARM946E-S™ and MIPS64™ 5Kf™ RISCMicroprocessors; AVR® RISC Microcontroller; OakDSPCore™,Teak™ andPalmDSPCore™ Digital Signal Processors; 10/100 Ethernet MAC, USB, 1394, 1284,CAN and Other Assorted Processor Peripherals Analog Functions: DACs, ADCs, OPAMPs, Comparators, PLLs and PORs Soft Macro Memory: Gate ArraySRAM - ROM - DPSRAM - FIFO Hard Macro Memory: Embedded ArraySRAM - ROM - DPSRAM - FIFO - Stacked E2- Stacked Flash I/O Interfaces: CMOS, LVTTL, LVDS, PCI, USB; Output Currents up to 16 mA@2.5V; 2.5V Native I/O, 3.3V Tolerant/Compliant I/O, 5.0V Tolerant I/O
Parameter |
Rating |
Operating Ambient Temperature |
−65°Cto+125°C |
Storage Temperature |
−65°Cto+150°C |
Maximum Input Volutage: |
VDD +0.5V |
Maximum Operating Voltage (VDD) |
2.7V |
Maximum Operating Voltage (VDD3) |
3.6V |
The ATL120 Series ASIC family is fabricated on a 0.25µ CMOS process with up to fivelevels of metal. This family features arrays with up to 6.9 million routable gates and976 pins. The high density and high pin count capabilities of the ATL25 family, coupledwith the ability to add embedded microprocessor cores, DSP engines and memory onthe same silicon, make the ATL25 series of ASICs an ideal choice for system-levelintegration.