DescriptionThe ATF28HC64B-12SI is designed as one kind of radiation hardened SRAM-based reprogrammable FPGA device that is manufactured using the ATMEL 0.18 rad-hard AT58KRHA CMOS technology. And this device offers a patented distributed 10 ns SEU hardened SRAM capability where the RAM can be used...
ATF28HC64B-12SI: DescriptionThe ATF28HC64B-12SI is designed as one kind of radiation hardened SRAM-based reprogrammable FPGA device that is manufactured using the ATMEL 0.18 rad-hard AT58KRHA CMOS technology. And th...
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The ATF28HC64B-12SI is designed as one kind of radiation hardened SRAM-based reprogrammable FPGA device that is manufactured using the ATMEL 0.18 rad-hard AT58KRHA CMOS technology. And this device offers a patented distributed 10 ns SEU hardened SRAM capability where the RAM can be used without losing logic resources.
Features of the ATF28HC64B-12SI are:(1)SRAM based FPGA designed for Space use;(2)Global Reset Option;(3)8 Global Clocks and 4 Fast Clocks;(4)8 LVDS transceivers and 8 LVDS receivers;(5)Cold sparing and PCI Compliant I/Os: 308 for 472pins MCGA package and 150 for 256pins MQFPF package;(6)Self Integrity Check (SIC) of the configuration during FPGA operation;(7)ESD better than 2000V;(8)Radiation Performance: Total Dose tested up to 300 krads (Si) and No single event latch-up below a LET of 80 MeV/mg/cm2.
The absolute maximum ratings of the ATF28HC64B-12SI can be summarized as:(1)Supply Voltage 1.8V I/Os (VCC buffers): -0.3 V to +2 V;(2)Supply Voltage 3.3V I/Os (VCC buffers): -0.3 V to +4 V;(3)Supply Voltage Core (VDD array): -0.3 V to +2 V;(4)Storage Temperature: -65°C to +150°C;(5)All Output Voltages with respect to Ground: -0.3 V to 4 V;(6)ESD: 3000 V. If you want to know more information about the ATF28HC64B-12SI, please download the datasheet in www.seekic.com or www.chinaicmart.com .