AT88SC101

Features:

· 1K x 1 Serial E²PROM With Security Logic
· Available in Two Memory Organizations:
AT88SC10111K x 1Memory Zone
AT88SC1022512 x 1Memory Zone
· Supports ISO/IEC 7816-3 Synchronous Protocol
· Stores and Validates Security Codes
· Counts Incorrect Security Code Attempts
· Provides Transport Code Security
· Manufactured Using Low Power CMOS Technology
· VPP Internally Generated
· 2 ms Read Access Time; 5 ms Write Cycle Time
· Temperature Range From -25°C to 70°C
· ESD Immunity > 4K Volts
· High Reliability:
100,000 Write/Erase Cycles
100 Years Data Retention



Specifications

Operating Temperature................ -55°C to +125°C Storage Temperature................... -65°C to +150°C Voltage on Any Pin with Respect to Ground ................... -1.0 V to +7.0 V Maximum Operating Voltage ............................. 6.6 V DC Output Current .......................................... 5.0 mA

*NOTICE: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only.Operation beyond the "operating conditions" is not recom-mended and extended exposure beyond the "Operating Conditions" may affect device reliability.

Description

The AT88SC101/102 family provides 1024 bits of serial E2PROM (Electrically Erasable and Programmable Read Only Memory) with additional security logic for use in secure smart card applications. The AT88SC 101 is available in one 1024 x 1 bit memory zones, and the AT88SC102 is available in two 512 x 1 bit memory zones.

The security features of Atmel's AT88SC101/102 include: data access only after validation of the security code permanent invalidation of device upon four consecutive false security code presentations read/write protection of certain memory zones device reset if power drops secure transport of devices using transport code compare sequence

The AT88SC101/102 is manufactured using low-power CMOS technology and features its own internal high-voltage
pump for single voltage supply operation. The devices are guaranteed to 100,000 erase/write cycles and 100 year data retention. Endurance up to one-million