AT68166H

The AT68166H is designed as one kind of 16Mbit SRAM packaged in a hermetic Multi Chip Module (MCM) for space applications. And this device incorporates four 4Mbit AT60142H SRAM dice. It can be organized as either one bank of 512Kx8, two banks of 512Kx16 or four banks of 512Kx8. And also this device is processed according to the test methods of the latest revision of the MIL-PRF-38535 or the ESCC 9000.

Features of the AT68166H are:(1)16 Mbit SRAM Multi Chip Module; (2)Allows 32-, 16- or 8-bit access configuration; (3)Operating Voltage: 3.3V +/- 0.3V; (4)Military Temperature Range: -55 to +125 ; (5)TTL-Compatible Inputs and Outputs; (6)Asynchronous; (7)Die manufactured on Atmel 0.25 um Radiation Hardened Process; (8)No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2 @125; (9)Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019; (10)ESD better than 4000V.

The absolute maximum ratings of the AT68166H can be summarized as:(1)Supply Voltage to GND Potential: -0.5V to +4.6V;(2)Voltage range on any input: GND-0.5V to 4.6V;(3)Voltage range on any ouput: GND-0.5V to 4.6V;(4)Storage Temperature: -65°C to +150°C;(5)Output Current from Output Pins: 20 mA;(6)Electrostatic Discharge Voltage (MIL STD 883D Method 3015): > 4000 V. If you want to know more information about the AT68166H, please download the datasheet in www.seekic.com or www.chinaicmart.com .