Features: • Organized as 2M x 8 bits
• Single 3.3V Power Supply
• Stacks of 16 SRAM 128K x 865609E Die
• Access Time: 40 ns
• Very Low Power Consumption
Active: 100 mW (Typ)
Standby: 1 mW (Typ)
• TTL-Compatible Inputs and Outputs
• Die Designed on 0.35 Micron Process
• No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 200 krads (Si) according to MIL STD 883 Method 1019
• Wide Temperature Range 55°C to +125°C
• Built and Tested by 3D+, using 3D+ Die Stacking Technology
PinoutSpecifications
Supply Voltage to GND Potential: .............................. -0.5 to +5V
DC Input Voltage GND .................................GND -0.3 to VCC0.3V
DC Output Voltage high-Z-State GND ..................................... GND -0.3 to VCC+0.3V
Storage Temperature ......................................... -65 to +150°C
Output Current into Outputs (Low).................................... 20 mA
Electro Statics Discharge Voltage (MIL STD 883D method 3015.3)....................................... >1500V
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DescriptionThe AT61162E is a Rad Tolerant module, highly-integrated and very low-power CMOS static RAM organized as 2M x 8 bits. It is organized with 16 banks of 1 Mbit. Each bank has a 8-bit interface and is selected with 16 specific CS: 0 - 15. Banks are selectable by pairs with 8 specific BS: 0 - 7.
This module AT61162E takes full benefit of the 3D+ cube technology, and it is assembled and tested by 3D+, using Atmel 656-09E 1-Mbit SRAM die: it is built with 8 layers, each one housing 2 dies. 10 nF decoupling capacitors are embedded for each memory die. This module brings the solution to applications where fast computing is as mandatory as low power consumption, for example: space electronics, portable instruments, or embarked systems.
AT61162E is processed according to the methods of the latest revision of the MIL PRF 38535, QML N (QML Q coun-terpart for plastic).
The package AT61162E is a 64 gull wing pins dual in line, 11 mm wide, 28 mm long and 14.3 mm height and 0.8 mm pin pitch.