AT61162E

Features: • Organized as 2M x 8 bits• Single 3.3V Power Supply• Stacks of 16 SRAM 128K x 865609E Die• Access Time: 40 ns• Very Low Power Consumption Active: 100 mW (Typ) Standby: 1 mW (Typ)• TTL-Compatible Inputs and Outputs• Die Designed on 0.35 Micron ...

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AT61162E Picture
SeekIC No. : 004290533 Detail

AT61162E: Features: • Organized as 2M x 8 bits• Single 3.3V Power Supply• Stacks of 16 SRAM 128K x 865609E Die• Access Time: 40 ns• Very Low Power Consumption Active: 100 mW (Ty...

floor Price/Ceiling Price

Part Number:
AT61162E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Organized as 2M x 8 bits
• Single 3.3V Power Supply
• Stacks of 16 SRAM 128K x 865609E Die
• Access Time: 40 ns
• Very Low Power Consumption
   Active: 100 mW (Typ)
   Standby: 1 mW (Typ)
• TTL-Compatible Inputs and Outputs
• Die Designed on 0.35 Micron Process
• No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2
• Tested up to a Total Dose of 200 krads (Si) according to MIL STD 883 Method 1019
• Wide Temperature Range 55°C to +125°C
• Built and Tested by 3D+, using 3D+ Die Stacking Technology



Pinout

  Connection Diagram  Connection Diagram


Specifications

Supply Voltage to GND Potential: .............................. -0.5 to +5V

DC Input Voltage GND .................................GND -0.3 to VCC0.3V

DC Output Voltage
high-Z-State GND ..................................... GND -0.3 to VCC+0.3V

Storage Temperature ......................................... -65 to +150°C

Output Current into Outputs (Low).................................... 20 mA


Electro Statics Discharge Voltage
(MIL STD 883D method 3015.3)....................................... >1500V

 




Description

The AT61162E is a Rad Tolerant module, highly-integrated and very low-power CMOS static RAM organized as 2M x 8 bits. It is organized with 16 banks of 1 Mbit. Each bank has a 8-bit interface and is selected with 16 specific CS: 0 - 15. Banks are selectable by pairs with 8 specific BS: 0 - 7.

This module AT61162E takes full benefit of the 3D+ cube technology, and it is assembled and tested by 3D+, using Atmel 656-09E 1-Mbit SRAM die: it is built with 8 layers, each one housing 2 dies. 10 nF decoupling capacitors are embedded for each memory die. This module brings the solution to applications where fast computing is as mandatory as low power consumption, for example: space electronics, portable instruments, or embarked systems.

AT61162E is processed according to the methods of the latest revision of the MIL PRF 38535, QML N (QML Q coun-terpart for plastic).

The package AT61162E is a 64 gull wing pins dual in line, 11 mm wide, 28 mm long and 14.3 mm height and 0.8 mm pin pitch.


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