AT61162

Features: • Organized as 2M x 8 bits• Single 3.3V Power Supply• Stacks of 16 SRAM 128K x 865609E Die• Access Time: 40 ns• Very Low Power Consumption Active: 100 mW (Typ) Standby: 1 mW (Typ)• TTL-Compatible Inputs and Outputs• Die Designed on 0.35 Micron ...

product image

AT61162 Picture
SeekIC No. : 004290532 Detail

AT61162: Features: • Organized as 2M x 8 bits• Single 3.3V Power Supply• Stacks of 16 SRAM 128K x 865609E Die• Access Time: 40 ns• Very Low Power Consumption Active: 100 mW (Ty...

floor Price/Ceiling Price

Part Number:
AT61162
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/7/15

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Organized as 2M x 8 bits
• Single 3.3V Power Supply
• Stacks of 16 SRAM 128K x 865609E Die
• Access Time: 40 ns
• Very Low Power Consumption
  Active: 100 mW (Typ)
  Standby: 1 mW (Typ)
• TTL-Compatible Inputs and Outputs
• Die Designed on 0.35 Micron Process
• Latch-up Immune
• 200 Krads (TM1019.5)
• Wide Temperature Range 55°C to +125°C
• Built and Tested by 3D+, using 3D+ Die Stacking Technology



Pinout

  Connection Diagram


Specifications

Supply Voltage to GND Potential ............................ 0.5 to +5V
DC Input Voltage GND ...........................GND -0.3 to VCC0.3V
DC Output Voltage high-Z-State GND ... GND -0.3 to VCC+0.3V
Storage Temperature ......................................... -65 to +150°C
Output Current into Outputs (Low)................................. 20 mA
Electro Statics Discharge Voltage
(MIL STD 883D method 3015.3).................................. >1500V



Description

The AT61162E is a Rad Tolerant module, highly-integrated and very low-power CMOS static RAM organized as 2M x 8 bits. It is organized with 16 banks of 1 Mbit. Each bank has a 8-bit interface and is selected with 16 specific CS: 0 - 15. Banks are selectable by pairs with 8 specific BS: 0 - 7.

This module AT61162 takes full benefit of the 3D+ cube technology, and it is assembled and tested by 3D+, using Atmel 65609E 1-Mbit SRAM die: it is built with 8 layers, each one housing 2 dies. 10 nF decoupling capacitors are embedded for each memory die.

This module AT61162 brings the solution to applications where fast computing is as mandatory as low power consumption, for example: space electronics, portable instruments, or embarked systems.

AT61162E is processed according to the methods of the latest revision of the MIL PRF 38535, QML N (QML Q counterpart for plastic).

The AT61162 package is a 64 gull wing pins dual in line, 11 mm wide, 28 mm long and 14.3 mm height and 0.8 mm pin pitch.

 




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Inductors, Coils, Chokes
Crystals and Oscillators
Integrated Circuits (ICs)
Cable Assemblies
Prototyping Products
DE1
View more