Features: • Organized as 2M x 8 bits• Single 3.3V Power Supply• Stacks of 16 SRAM 128K x 865609E Die• Access Time: 40 ns• Very Low Power Consumption Active: 100 mW (Typ) Standby: 1 mW (Typ)• TTL-Compatible Inputs and Outputs• Die Designed on 0.35 Micron ...
AT61162: Features: • Organized as 2M x 8 bits• Single 3.3V Power Supply• Stacks of 16 SRAM 128K x 865609E Die• Access Time: 40 ns• Very Low Power Consumption Active: 100 mW (Ty...
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The AT61162E is a Rad Tolerant module, highly-integrated and very low-power CMOS static RAM organized as 2M x 8 bits. It is organized with 16 banks of 1 Mbit. Each bank has a 8-bit interface and is selected with 16 specific CS: 0 - 15. Banks are selectable by pairs with 8 specific BS: 0 - 7.
This module AT61162 takes full benefit of the 3D+ cube technology, and it is assembled and tested by 3D+, using Atmel 65609E 1-Mbit SRAM die: it is built with 8 layers, each one housing 2 dies. 10 nF decoupling capacitors are embedded for each memory die.
This module AT61162 brings the solution to applications where fast computing is as mandatory as low power consumption, for example: space electronics, portable instruments, or embarked systems.
AT61162E is processed according to the methods of the latest revision of the MIL PRF 38535, QML N (QML Q counterpart for plastic).
The AT61162 package is a 64 gull wing pins dual in line, 11 mm wide, 28 mm long and 14.3 mm height and 0.8 mm pin pitch.