Specifications IC 100 mA VCE 60 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °CDescriptionThe AT6019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage ...
AT6019-10: Specifications IC 100 mA VCE 60 V PDISS 250 mW @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °CDescriptionThe AT6019-10 is an Epitaxial Silicon Abrupt Junction Microwav...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • High-performance System Speeds > 100 MHz Flip-flop Toggle Rates > 250 MH...
DescriptionThe AT60002-2QI is designed as one kind of SRAM-based Field Programmable Gate Arrays (F...
IC | 100 mA |
VCE | 60 V |
PDISS | 250 mW @ TC = 25 °C |
TJ | -65 °C to +150 °C |
TSTG | -65 °C to +150 °C |
The AT6019-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship Closley Approximates Square Law (n = 0.5).