Specifications IC 100mA VCE 60V PDISS 250 mW @ TC = 25 TJ -65 to +150 TSTG -65 to +150DescriptionThe AT6017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leaka...
AT6017-10: Specifications IC 100mA VCE 60V PDISS 250 mW @ TC = 25 TJ -65 to +150 TSTG -65 to +150DescriptionThe AT6017-10 is an Epitaxial Silicon Abrupt Junction Micro...
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Features: • High-performance System Speeds > 100 MHz Flip-flop Toggle Rates > 250 MH...
DescriptionThe AT60002-2QI is designed as one kind of SRAM-based Field Programmable Gate Arrays (F...
IC |
100mA |
VCE |
60V |
PDISS |
250 mW @ TC = 25 |
TJ |
-65 to +150 |
TSTG |
-65 to +150 |
The AT6017-10 is an Epitaxial Silicon Abrupt Junction Microwave Tuning Varactor. This Device is Passivated With Silicon Dioxide Which Results in Very Low Leakage Current. The Capacitance Voltage Relationship Closley Approximates Square Law (n = 0.5).