AT49SV322AT

• Single Voltage Read/Write Operation: 1.65V to 1.95V
• Access Time 80 ns
• Sector Erase Architecture
Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time 12 µs
• Fast Sector Erase Time 300 ms
• Suspend/Resume Feature for Erase and Program
Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word
• Low-power Operation
12 mA Active
13 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• VPP Pin for Write Protection
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)

The AT49SV322AT is a 1.8-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device AT49SV322AT can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.