AT49SN6416T

Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages Except VPP (Including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
VPP Input Voltage with Respect to Ground ......................................... 0V to 10.0V
All Output Voltages with Respect to Ground ...........................-0.6V to VCCQ + 0.6V

The AT49SN6416(T) is a 1.8-volt 64-megabit Flash memory. The memory is divided into multiple sectors and planes for erase operations. The device can be read or reprogrammed off a single 1.8V power supply, making it ideally suited for In-System programming. The device can be configured to operate in the asynchronous/page read (default mode) or burst read mode. The burst read mode is used to achieve a faster data rate than is possible in the asynchronous/page read mode. If the AVD and the CLK signals are both tied to GND and the burst configuration register is configured to perform asynchronous reads, the device will behave like a standard asynchronous Flash memory. In the page mode, the AVD signal can be tied to GND or can be pulsed low to latch the page address. In both cases the CLK can be tied to GND.

The AT49SN6416(T) is divided into four memory planes. A read operation can occur in any of the three planes which is not being programmed or erased. This concurrent operation allows improved system performance by not requiring the system to wait for a program or erase operation to complete before a read is performed. To further increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors. There is no reason to suspend the erase or program operation if the data to be read is in another memory plane.

The AT49SN6416T VPP pin provides data protection and faster programming times. When the VPP input is below 0.4V, the program and erase functions are inhibited. When VPP is at 0.9V or above, normal program and erase operations can be performed. With V_PP at 10.0V, the program (Dualword Program command) operation is accelerated.