Features: `Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)` Fast Read Access Time - 120 ns ` Internal Program Control and Timer ` 16K bytes Boot Block With Lockout ` Fast Erase Cycle Time - 10 seconds ` Byte-By-Byte Programming - 30 ms/Byte Typical ` Hardware Data Protection...
AT49LV080T-15CI: Features: `Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)` Fast Read Access Time - 120 ns ` Internal Program Control and Timer ` 16K bytes Boot Block With Lockout ` Fast Eras...
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Temperature Under Bias.................... -55to +125
Storage Temperature........................ -65 to +150
All Input Voltages (including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground ..............-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The AT49BV/AT49LV080T-15CI are 3-volt-only in-system Flash Memory devices. Their 8 megabits of memory are organized as 1,024,576 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 mA.
The device AT49LV080T-15CI contains a user-enabled "boot block" protection feature. Two versions of the feature are available: the AT49BV/LV080 locates the boot block at lowest order addresses ("bottom boot"); the AT49BVLV080T locates it at highest order addresses ("top boot").