AT49LV040

Features: • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)• Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Chip Erase Cycle Time - 10 seconds • Byte-by-Byte Programming - 30...

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AT49LV040 Picture
SeekIC No. : 004290419 Detail

AT49LV040: Features: • Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)• Fast Read Access Time - 120 ns • Internal Program Control and Timer • 16K bytes Boot Bloc...

floor Price/Ceiling Price

Part Number:
AT49LV040
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• Single Voltage for Read and Write:  2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time - 120 ns
• Internal Program Control and Timer
• 16K bytes Boot Block With Lockout
• Fast Chip Erase Cycle Time - 10 seconds
• Byte-by-Byte Programming - 30 µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
   25 mA Active Current
   50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
   8 x 8 mm CBGA
   8 x 14 mm V-TSOP



Pinout

  Connection Diagram


Specifications

Temperature Under Bias............................... -55°C to +125°C
Storage Temperature ................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground ............................ -0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ..................................-0.6V to + 13.5V



Description

The AT49BV/AT49LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288 words of 8-bits each.  Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range.  When the device is deselected, the CMOS standby current is less than 50 µA.

The device AT49LV040 contains a user-enabled "boot block" protection feature. Two versions of the feature are available: the AT49BV/LV040 locates the boot block at lowest order addresses ("bottom boot"); the AT49BV/LV040T locates it at highest order addresses ("top boot").

To allow for simple in-system reprogrammability, the AT49BV/AT49LV040 does not require high input voltages for programming.  Three-volt-only commands determine the read and programming operation of the device.  Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49BV/LV040 is performed by erasing the entire 4 megabits of memory and then programming on a byte-by-byte basis.  The typical byte programming time is a fast 30 µs.  The end of a program cycle can be optionally detected by the DATA polling feature.  Once the end of a byte program cycle has been detected, a new access for a read or program can begin.  The typical number of program and erase cycles is in excess of 10,000 cycles.

The optional 16K bytes boot block section includes a reprogramming write lock out feature to provide data integrity. The AT49LV040 boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.




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