AT49LV010

Temperature Under Bias .......................-55 to +125
Storage Temperature............................-65 to +150
All Input Voltages (including NC Pins)
with Respect to Ground....................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground................. -0.6V to V_CC + 0.6V
Voltage onOE
with Respect to Ground....................... -0.6V to +13.5V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

The AT49(H)BV010 and the AT49LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial temperature range. When the devices are deselected, the CMOS standby current is less than 50 A.

To allow for simple in-system reprogrammability, the AT49(H)BV/AT49LV010 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49(H)BV/AT49LV010 is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 30 s. The end of a program cycle can be optionally detected by the DATA polling feature. Once the en of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.