Features: • Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)• Fast Read Access Time - 70 ns• Internal Program Control and Timer• Sector Architecture One 16K Byte Boot Block with Programming Lockout Two 8K Byte Parameter Blocks Two Main Memory Blocks (96K...
AT49LV002NT: Features: • Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)• Fast Read Access Time - 70 ns• Internal Program Control and Timer• Sector Architecture One 1...
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Temperature Under Bias................................ -55°C to +125°C Storage Temperature .....................................-65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE with Respect to Ground ...................................-0.6V to +13.5V |
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
The AT49BV/AT49LV002NT is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 mA.