AT49HBV010

The AT49HBV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each.  Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial temperature range. When the devices are deselected, the CMOS standby current is less than 50 µA. 

To allow for simple in-system reprogrammability, the AT49HBV010/(H)LV010 does not require high input voltages for programming.  Three-volt-only commands determine the read and programming operation of the device.  Reading data out of the device is similar to reading from an EPROM.  Reprogramming the AT49(H)BV/(H)LV010  is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 30 µs.  The end of a program cycle can be optionally detected by the DATA polling feature.  Once the end of a byte program cycle has been detected, a new access for a read or program can begin.  The typical number of program and erase cycles is in excess of 10,000 cycles.  

The optional 8K bytes boot block section AT49HBV010 includes a reprogramming write lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.