AT49F8192

Features:

• Single Voltage Operation
  5V Read
  5V Reprogramming
• Fast Read Access Time - 90 ns
• Internal Erase/Program Control
• Sector Architecture
  One 8K Words (16K bytes) Boot Block with Programming Lockout
  Two 8K Words (16K bytes) Parameter Blocks
  One 488K Words (976K bytes) Main Memory Array Block
• Fast Sector Erase Time - 10 seconds
• Word-By-Word Programming - 50 ms/Word
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
  50 mA Active Current
  300 A CMOS Standby Current
• Typical 10,000 Write Cycles


Pinout




Specifications

Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages (including NC pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground ......................... -0.6V to V_CC to +0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V

*NOTICE: Stresses beyong those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.


Description

The AT49F8192 is a 5-volt-only, 8 megabit Flash Memory organized as 512K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 300 A.

AT49F8192 contains a user-enabled "boot block" protection feature. Two versions of the feature are available: the AT49F8192 locates the boot block at lowest order addresses ("bottom boot"); the AT49F8192T locates it at highest order addresses ("top boot").

To allow for simple in-system reprogrammability, the AT49F8192 does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM;AT49F8192 has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49F8192 is performed by first erasing a block of data and then programming on a wordby- word basis.

AT49F8192 is erased by executing the erase command sequence; the device internally controls the erase operation. The memory is divided into three blocks for erase operations. There are two 8K word parameter block sections and one sector consisting of the boot block and the main memory array block. The AT49F8192 is programmed on a word-by-word basis. AT49F8192 has the capability to protect the data in the boot block; AT49F8192 feature is enabled by a command sequence. Once the boot block programming lockout feature is enabled, the data in the boot block cannot be changed when input levels of 5.5 volts or less are used. The typical number of program and erase cycles is in excess of 10,000 cycles.

The optional 8K word boot block section includes a reprogramming lock out feature to provide data integrity. The boot sector of AT49F8192 is designed to contain user secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.