AT49F8011

Features:

• 4.5V to 5.5V Read/Write
• Access Time - 70 ns
• Sector Erase Architecture
   Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout
   Two 16K Word (32K Byte) Sectors with Individual Write Lockout
   Two 8K Word (16K Byte) Sectors with Individual Write Lockout
   Four 4K Word (8K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time - 10 s
• Fast Sector Erase Time - 200 ms
• Dual Plane Organization, Permitting Concurrent Read while Program/Erase
   Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors
   Memory Plane B: Fourteen 32K Word Sectors
• Erase Suspend Capability
   Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
• Low-power Operation
   40 mA Active
   10 A Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Program Unlock Command
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available


Pinout




Specifications

Temperature Under Bias......................... -55° C to +125°C
Storage Temperature ............................. -65° C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .........................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................................-0.6V to +13.5V


Description

The AT49F8011(T) is a 5.0 volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball CBGA packages. AT49F8011 has CE, and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 5.0V power supply, making it ideally suited for in-system programming.