AT49F512

Features:

• Single Voltage Operation
  5V Read
  5V Reprogramming
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• 8K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 10 s/Byte
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
  30 mA Active Current
  100 A CMOS Standby Current
• Typical 10,000 Write Cycles


Pinout




Specifications

Temperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V_CC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.



Description

The AT49F512 is a 5-volt-only in-system programmable and erasable Flash Memory. Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, AT49F512 offer access times to 70 ns with a power dissipation of just 165 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 A.

To allow for simple in-system reprogrammability, the AT49F512 does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the entire 512K of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 10 ms. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.

The optional 8K bytes boot block section includes a reprogramming write lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector of AT49F512 is permanently protected from being reprogrammed.