AT49F080T

Features:

* Single Voltage Operation
   5V Read
   5V Reprogramming
* Fast Read Access Time - 90 ns
* Internal Program Control and Timer
* 16K bytes Boot Block With Lockout
* Fast Erase Cycle Time - 10 seconds
* Byte-By-Byte Programming - 10 s/Byte Typical
* Hardware Data Protection
* DATA Polling For End Of Program Detection
* Low Power Dissipation
   50 mA Active Current
   100 A CMOS Standby Current
* Typical 10,000 Write Cycles


Pinout




Specifications

Temperature Under Bias................................ -55to +125
Storage Temperature..................................... -65to +150
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground...................................-0.6V to +13.5V
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent dam-age to the device. This is a stress rating   only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied.  Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Description

The AT49F080 is a 5-volt-only in-system Flash Memory device. AT49F080T 8-megabits of memory is organized as 1,024,576 words by 8-bits.  Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 90 ns with power dissipation of just 275 mW over the commercial temperature range.  When the device is deselected, the CMOS standby current is less than 100 A.
The device contains a user-enabled "boot block" protection feature. Two versions of the feature of AT49F080T are available: the AT49F080 locates the boot block at lowest order addresses ("bottom boot"); the AT49F080T locates it at highest order addresses ("top boot").To allow for simple in-system reprogrammability, the AT49F080 does not require high input voltages for programming.  5-volt-only commands determine the read and programming operation of the device.  Reading data out of the device is similar to reading from an EPROM.  Repro-gramming the AT49F080 is performed by erasing the entire 8 megabits of memory and then programming on a byte-by-byte basis.  The typical byte programming time is a fast 10s.  The end of a program cycle can be optionally detected by the DATA polling feature.  Once the end of a byte pro-gram cycle has been detected, a new access for a read or program can begin.  The typical number of program and erase cycles is in excess of 10,000 cycles The optional 16K bytes boot block section includes a repro-gramming write lock out feature to provide data integrity.The boot sector is designed to contain user secure code,and when the feature is enabled, the boot sector of AT49F080T is perma-nently protected from being reprogrammed.