AT49F040

Features:

· Single Voltage Operation
- 5V Read
- 5V Reprogramming
· Fast Read Access Time - 90 ns
· Internal Program Control and Timer
· 16K bytes Boot Block With Lockout
· Fast Erase Cycle Time - 10 seconds
· Byte By Byte Programming - 50 ms/Byte
· Hardware Data Protection
· DATA Polling For End Of Program Detection
· Low Power Dissipation
- 50 mA Active Current
- 100 mA CMOS Standby Current
· Typical 10,000 Write Cycles

Pinout




Specifications

Temperature Under Bias............... -55°C to +125°C
Storage Temperature................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground .................. -0.6V to + 13.5V


Description

The AT49F040 is a 5-volt-only in-system Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, AT49F040 offers access times to 90 ns with power dissipation of just 275 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 mA.

To allow for simple in-system reprogrammability, the AT49F040 does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49F040 is performed by erasing the entire 4 megabits of memory and then programming on a byte by byte basis. The byte programming time is a fast 50 ms. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program of AT49F040 can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.