Features: • Single Voltage Operation 5V Read 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • 8K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds• Byte By Byte Programming - 50 µs/Byte • Ha...
AT49F020: Features: • Single Voltage Operation 5V Read 5V Reprogramming • Fast Read Access Time - 55 ns • Internal Program Control and Timer • 8K bytes Boot Block With Lockout R...
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The AT49F020 is a 5-volt-only in-system Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 275 mW over the commercial temperature range. When AT49F020 is deselected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F020 does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of AT49F020 is similar to reading from an EPROM. Reprogramming the AT49F020 is performed by erasing the entire 2 megabits of memory and then programming on a byte by byte basis. The byte programming time of AT49F020 is a fast 50 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.