AT49F010

Features:

*Single Voltage Operation 
  -  5V Read 
  -  5V Reprogramming 
*Fast Read Access Time - 45 ns
*Internal Program Control and Timer
*8K bytes Boot Block With Lockout
*Fast Erase Cycle Time - 10 seconds
*Byte By Byte Programming - 10 s/Byte 
*Hardware Data Protection
*DATA Polling For End Of Program Detection
*Low Power Dissipation 
  - 30 mA Active Current
  - 100 A CMOS Standby Current
*Typical 10,000 Write Cycles


Pinout




Specifications

The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu- factured with Atmel's advanced nonvolatile CMOS technology, the devices offer ac-cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 A. 

To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re- quire high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device.  Reading data out of the device is similar to reading from an EPROM.  Reprogramming the AT49F010/HF010 is per- formed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The byte programming time is a fast 50 s.  The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte pro-gram cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles. 


Description

The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu- factured with Atmel's advanced nonvolatile CMOS technology, the devices offer ac-cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the commercial temperature range. When AT49F010 is deselected, the CMOS standby current is less than 100 A. 

To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re- quire high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device.  Reading data out of the device is similar to reading from an EPROM.  Reprogramming the AT49F010/HF010 is per- formed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The byte programming time is a fast 50 s.  The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte pro gram cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.