AT49F008AT

• Single-voltage Operation5V Read 5V Programming
• Fast Read Access Time 90 ns
• Internal Erase/Program Control
• Sector Architecture One 8K Word (16K Bytes) Boot Block with Programming Lockout Two 4K Word (8K Bytes) Parameter Blocks One 496K Word (992K Bytes) Main Memory Array Block
• Fast Sector Erase Time 10 seconds
• Byte-by-byte or Word-by-word Programming 10 µs Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation 50 mA Active Current 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles

The AT49F008A(T) and AT49F8192A(T) are 5-volt, 8-megabit Flash memories orga-nized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufacturedwith Atmel's advanced nonvolatile CMOS technology,AT49F008AT offer access timesto 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standbycurrent is less than 100 µA.

AT49F008AT contains a user-enabled "boot block" protection feature. Two versions ofthe feature are available: the AT49F008A/8192A locates the boot block at lowestorder addresses ("bottom boot"); the AT49F008AT/8192AT locates it at highest orderaddresses ("top boot").

To allow for simple in-system reprogrammability, the AT49F008A(T)/8192A(T) doesnot require high-input voltages for programming. Reading data out of AT49F008AT issimilar to reading from an EPROM; it has standard CE, OE and WE inputs to avoidbus contention. Reprogramming the AT49F008A(T)/8192A(T) is performed by firsterasing a block of data and then programming on a byte-by-byte or word-by-wordbasis.