AT49F004T

Features:

Single Voltage Operation
  5V Read
  5V Programming
Fast Read Access Time - 55 ns
Internal Erase/Program Control
Sector Architecture
  One 8K Words (16K bytes) Boot Block with Programming Lockout
  Two 4K Words (8K bytes) Parameter Blocks
  One 240K Words (480K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 10 µs Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
  50 mA Active Current
  300 µA CMOS Standby Current
Typical 10,000 Write Cycles


Specifications

Temperature Under Bias.............................-55°C to +125°C
Storage Temperature..................................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to VCC+ 0.6V
Voltage on RESET
with Respect to Ground...................................-0.6V to +13.5V


Description

The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories orga-nized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 300 µA.
The device contains a user-enabled "boot block" protection feature. Two versions of the feature are available: the AT49F004/4096A locates the boot block at lowest order
addresses ("bottom boot"); the AT49F004T/4096AT locates it at highest order addresses ("top boot").
To allow for simple in-system reprogrammability, the AT49F004(T)/4096A(T) does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE, OE, and WE
inputs to avoid bus con-tention. Reprogramming the AT49F004(T)/4096A(T) is performed by first erasing a(continued)