Features: Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
Fast Read Access Time - 70 ns
Internal Program Control and Timer
Sector Architecture
One 16K Byte Boot Block with Programming Lockout
Two 8K Byte Parameter Blocks
Two Main Memory Blocks (96K, 128K) Bytes
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 30 ms/Byte Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
25 mA Active Current
50 mA CMOS Standby Current
Typical 10,000 Write Cycles
Pinout![Connection Diagram](/uploadfile/ic-data/20091221638472.jpg)
![Connection Diagram](/uploadfile/ic-data/20091221645167.jpg)
SpecificationsTemperature Under Bias................................ -55°C to +125°C
Storage Temperature .................................... -65°C to +150°C
All Input Voltages
including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5VDescriptionThe AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When AT49BV/LV002 is deselected, the CMOS standby current is less than 50 mA. For the