AT49BV802AT

Features:

• Single Voltage Read/Write Operation: 2.65V to 3.6V
• Access Time 70 ns
• Sector Erase Architecture
  Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout
  Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Byte/Word Program Time 12 µs
• Fast Sector Erase Time 300 ms
• Suspend/Resume Feature for Erase and Program
  Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector
  Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending Programming of Any Other Byte/Word
• Low-power Operation
  12 mA Active
  13 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP and CBGA Package Options
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)


Specifications

Temperature under Bias ................................ -55°C to +125°C

Storage Temperature ..................................... -65°C to +150°C

All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V

Voltage on VPP
with Respect to Ground ...................................-0.6V to +13.0V


Description

The AT49BV802A(T) is a 2.7-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sectors for erase operations. The AT49BV802A(T) is offered in a 48-lead TSOP and a 48-ball CBGA package. AT49BV802AT has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.