AT49BV6416T

64-megabit (4M x 16) Flash Memory
2.7V - 3.6V Read/Write
High Performance
   Asynchronous Access Time 70 ns
   Page Mode Read Time 20 ns
Sector Erase Architecture
   Eight 4K Word Sectors with Individual Write Lockout
   One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
Typical Sector Erase Time: 32K Word Sectors 700 ms; 4K Word Sectors 200 ms
Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being
   Programmed/Erased
   Memory Plane A: 16M of Memory Including Eight 4K Word Sectors
   Memory Plane B: 16M of Memory Consisting of 32K Word Sectors
   Memory Plane C: 16M of Memory Consisting of 32K Word Sectors
   Memory Plane D: 16M of Memory Consisting of 32K Word Sectors
Suspend/Resume Feature for Erase and Program
   Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector
   Supports Reading Any Word by Suspending Programming of Any Other Word
Low-power Operation
   30 mA Active
  35 A Standby
2.2V I/O Option Reduces Overall System Power
Data Polling and Toggle Bit for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operations
RESET Input for Device Initialization
TSOP Package
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Common Flash Interface (CFI)
Green (Pb/Halide-free) Packaging Option

The AT49BV6416(T) is a 2.7-volt 64-megabit Flash memory. The memory is divided into multiple sectors and planes for erase operations. The device can be read or reprogrammed off a single 2.7V power supply, making it ideally suited for in-system programming. The output voltage can be separately controlled down to 2.2V through the VCCQ supply pin. The device can operate in the asynchronous or page read mode.

The AT49BV6416(T) is divided into four memory planes. A read operation can occur in any of the three planes which is not being programmed or erased. This concurrent operation allows improved system performance by not requiring the system to wait for a program or erase operation to complete before a read is performed. To further increase the flexibility of the device, it contains an Erase Suspend and Program Sus-pend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors. There is no reason to suspend the erase or program operation if the data to be read is in another memory plane. The end of program or erase is detected by Data Polling or toggle bit.

The VPP pin provides data protection and faster programming times. When the V_PP input is below 0.7V, the program and erase functions are inhibited. When V_PP is at 1.65V or above, nor-mal program and erase operations can be performed. With V_PP  at 10.0V, the program (dual-word program command) operation is accelerated.

A six-byte command (Enter Single Pulse Program Mode)AT49BV6416T  to remove the requirement of entering the three-byteprogram sequence is offered to further improve programming time. After entering the six-byte code, only single pulses on the write control lines are required for writing into the device. This mode of AT49BV6416T (Single Pulse Word Program) is exited by powering down the device, by tak-ing the RESET pin to GND or by a high-to-low transition on the V_PP input. Erase, Erase Suspend/Resume, Program Suspend/Resume and Read Reset commands will not work while in this mode; if entered they will result in data being programmed into the device. AT49BV6416T is not recom-mended that the six-byte code reside in the software of the final product but only exist in external programming code.