Series: -
Operating Temperature: 0°C ~ 70°C
Format - Memory: FLASH
Memory Type: FLASH
Memory Size: 512K (64K x 8)
Voltage - Supply: 2.7 V ~ 3.6 V
Interface: Parallel
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Packaging: Tray
Manufacturer: Atmel
Supplier Device Package: 32-VSOP (8x14)
Speed: 120ns
Features: • Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Fast Read Access Time - 120 ns
• Internal Program Control and Timer
• 8K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µ µ µ µs/Byte typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
25 mA Active Current
50 µ µ µ µA CMOS Standby Current
• Typical 10,000 Write Cycles Pinout
SpecificationsTemperature Under Bias ............................... -55°C to +125°C
Storage Temperature .................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5VDescriptionThe AT49BV512 is a 3-volt-only, 512K Flash memories organized as 65,536 words of 8 bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just 90 mW over the commercial temperature range. When the devices are deselected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49BV512 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a reprogramming write lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector of AT49BV512-12VC is permanently protected from being reprogrammed.
Parameters: | Technical/Catalog Information | AT49BV512-12VC |
| Vendor | Atmel |
| Category | Integrated Circuits (ICs) |
| Memory Type | FLASH |
| Memory Size | 512K (64K x 8) |
| Speed | 120ns |
| Interface | Parallel |
| Package / Case | 32-VSOP |
| Packaging | Tray |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Operating Temperature | 0°C ~ 70°C |
| Format - Memory | FLASH |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | AT49BV512 12VC
AT49BV51212VC
|
AT49BV512-12VC Data Sheet
