DescriptionThe AT49BV322DT-70CU-H is one member of the AT49BV322DT series.The AT49BV322DT is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is di...
AT49BV322DT-70CU-H: DescriptionThe AT49BV322DT-70CU-H is one member of the AT49BV322DT series.The AT49BV322DT is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 b...
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The AT49BV322DT-70CU-H is one member of the AT49BV322DT series.The AT49BV322DT is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. AT49BV322DT-70CU-H has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.
Features of the AT49BV322DT-70CU-H are:(1)single voltage read/write operation: 2.65V to 3.6V; (2)access time70 ns; (3)fast word program time10 s; (4)fast sector erase time-100 ms; (5)sector lockdown support; (6)TSOP and CBGA package options; (7)top or bottom boot block configuration available; (8)128-bit protection register; (9)minimum 100,000 erase cycles; (10)common flash interface (CFI).
The absolute maximum ratings of the AT49BV322DT-70CU-H can be summarized as:(1)all input voltages (including NC Pins) with respect to ground:-0.6 to 6.25V;(2)all output voltages with respect to ground:-0.6 to Vcc+0.6V;(3)temperature under bias:-55 to 125;(4)storage temperature:-65 to 150;(5)voltage on Vpp with respect to ground:-0.6 to 9.5V.Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Each sector has a programming lockdown feature. This feature prevents programming of data in the designated sectors once the feature has been enabled.The program suspend command allows the system to interrupt a programming operation and then read data from a different byte/word within the memory. After the Program Suspend command is given, the device requires a maximum of 20 s to suspend the programming operation.