DescriptionThe AT49BV16X4 is 2.7- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each.The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7.The memory is divided into 40 sectors for erase operations. The absolute ma...
AT49BV16X4: DescriptionThe AT49BV16X4 is 2.7- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each.The x16 data appears on I/O0 - I/O15; the x8 data...
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The AT49BV16X4 is 2.7- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each.The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7.The memory is divided into 40 sectors for erase operations.
The absolute maximum ratings of the AT49BV16X4 can be summarized as:(1):the parameter is temperature under bias,the rating is -55 to +125,the unit is ;(2):the parameter is storage temperature,the rating is -65 to +150,the unit is ;(3):the parameter is all input voltages (including NC pins) with respect to ground,the rating is -0.6 to +6.25,the unit is V;(4):the parameter is all output voltages with respect to ground,the rating is -0.6 to VCC+0.6,the unit is V;(5):the parameter is voltage on OE with respect to ground,the rating is -0.6 to +13.5,the unit is V.
Stresses beyond those listed under "absolute maximum ratings"may cause permanent damage to the device. AT49BV16X4 is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied.