Features: * Single Voltage Read/Write Operation: 2.65V to 3.6V* Access Time 70 ns* Sector Erase Architecture Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout* Fast Word Program Time 12 s* Fast Sector Erase Time ...
AT49BV163AT: Features: * Single Voltage Read/Write Operation: 2.65V to 3.6V* Access Time 70 ns* Sector Erase Architecture Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout Eight 4K Word (8K ...
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Temperature under Bias ............................... -55 to +125
Storage Temperature .................................... -65 to +150
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on VPP
with Respect to Ground ...................................-0.6V to +13.0V
The AT49BV162A(T)/163A(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. AT49BV163AT can be read or reprogrammed using a single power supply,making it ideally suited for in-system programming.