AT49BV1614T

Features:

* 2.7V to 3.6V Read/Write
* Access Time - 90 ns
* Sector Erase Architecture
   Thirty 32K word (64K byte) Sectors with Individual Write Lockout
   Eight 4K word (8K byte) Sectors with Individual Write Lockout
   Two 16K word (32K byte) Sectors with Individual Write Lockout
* Fast Word Program Time - 20 s
* Fast Sector Erase Time - 200 ms
* Dual Plane Organization, Permitting Concurrent Read while Program/Erase
   Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
   Memory Plane B: Twenty-Four 32K Word Sectors
* Erase Suspend Capability
  Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
* Low Power Operation
  25 mA Active
  10 A Standby
* Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
* Optional V_PP Pin for Fast Programming
* RESET Input for Device Initialization
* Sector Program Unlock Command
* TSOP, CBGA, and BGA Package Options
* Top or Bottom Boot Block Configuration Available


Pinout




Specifications

Temperature Under Bias................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground.......................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground..................................-0.6V to V_CC+ 0.6V
Voltage on OE
with Respect to Ground........................................-0.6V to +13.5V


Description

The AT49BV16X4(T) is 2.7 to 3.6 volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 blocks for erase operations. The device is offered in 48-pin TSOP and 48-ball BGA  packages. The device has CE, and OE control signals to avoid any bus con- tention. AT49BV1614T can be read or reprogrammed using a single 2.7V power supply, making it ideally suited for in-system programming.

AT49BV1614T powers on in the read mode. Command sequences are used to place AT49BV1614T in other operation modes such as program and erase. The device has the capability to protect the data in any sector. Once the data protection for a given sector is enabled, the data in that sector cannot be changed using input levels between ground and V_CC .