Features: • Single Voltage Read/Write Operation: 2.65V to 3.6V• Access Time 70 ns• Sector Erase Architecture Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout• Fast Word Program Time 12 s...
AT49BV160C: Features: • Single Voltage Read/Write Operation: 2.65V to 3.6V• Access Time 70 ns• Sector Erase Architecture Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout...
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Temperature under Bias ............................... -55°C to +125°C
Storage Temperature ................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on VPP
with Respect to Ground ...................................-0.6V to +13.0V
*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each. The memory is divided into 39 sectors for erase operations. The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has CE and OE control signals to avoid any bus contention.AT49BV160C can be read or reprogrammed using a single power supply, making it ideally suited for in-system programming.