AT49BV1604AT

Features:

* Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
* AccessTime70ns
* Sector Erase Architecture
Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout
Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
* Fast Word Program Time 20 s
* Fast Sector Erase Time 300 ms
* Dual-plane Organization, Permitting Concurrent Read while Program/Erase
Memory Plane A: Eight 4K Word and Seven 32K Word Sectors
Memory Plane B: Twenty-four 32K Word Sectors
* Erase Suspend Capability
Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
* Low-power Operation
30mAActive
10 A Standby
* Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
* VPP Pin for Accelerated Program/Erase Operations
* RESET Input for Device Initialization
* Sector Lockdown Support
* TSOP and CBGA Package Options
* Top or Bottom Boot Block Configuration Available
* 128-bit Protection Register


Pinout

Specifications

Temperature under Bias ................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE and VPP
with Respect to Ground ...................................-0.6V to +13.0V


Description

The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in 48-lead TSOP and 48-ball CBGA packages. AT49BV1604AT has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single 2.65V power supply, making it ideally suited for in-system programming.