AT49BV040-90TI

Timing Type :
Packaging :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Operating Temperature : + 85 C
Memory Type : NOR
Access Time : 90 ns
Architecture : Sectored
Data Bus Width : 8 bit
Maximum Operating Current : 25 mA
Interface Type : Parallel
Memory Size : 4 Mbit
Package / Case : TSOP-32


Features:

• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time 70 ns
• Internal Program Control and Timer
• 16K Bytes Boot Block with Lockout
• Fast Chip Erase Cycle Time 10 seconds
• Byte-by-byte Programming 30 µs/Byte Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation
   25 mA Active Current
   50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
   8 x 14 mm VSOP/TSOP


Pinout




Specifications

Temperature under Bias ............................... -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V_CC + 0.6V
Voltage on OE
with Respect to Ground ..................................-0.6V to + 13.5V


Description

The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When AT49BV040-90TI is deselected, the CMOS standby current is less than 50 µA.

AT49BV040-90TI contains a user-enabled  "boot block"  protection feature. The AT49BV/LV040 locates the boot block at lowest order addresses ("bottom boot"). To allow for simple in-system reprogrammability, the AT49BV/LV040 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of AT49BV040-90TI is similar to reading from an EPROM. Reprogramming the AT49BV/LV040 is performed by erasing the entire four megabits of memory and then programming on a byte-by-byte basis. The typical byte programming time is a fast 30 µs. The end of a program cycle can be optionally detected by the Data Polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.

The optional 16K bytes boot block section includes a reprogramming write lockout feature to provide data integrity. The boot sector is designed to contain user-secure code, and when the feature is enabled, the boot sector is permanently protected from being reprogrammed.

Parameters:

Technical/Catalog Information	AT49BV040-90TI
Vendor	Atmel
Category	Integrated Circuits (ICs)
Memory Type	FLASH
Memory Size	4M (512K x 8)
Speed	90ns
Interface	Parallel
Package / Case	32-TSOP
Packaging	Tray
Voltage - Supply	2.7 V ~ 3.6 V
Operating Temperature	-40°C ~ 85°C
Format - Memory	FLASH
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	AT49BV040 90TI AT49BV04090TI