AT49BV040-90TC

IC FLASH MEM 2.7V 4M 90NS 32TSOP

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AT49BV040-90TC Picture
SeekIC No. : 004290219 Detail

AT49BV040-90TC: IC FLASH MEM 2.7V 4M 90NS 32TSOP

floor Price/Ceiling Price

Part Number:
AT49BV040-90TC
Mfg:
Atmel
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time 70 ns
• Internal Program Control and Timer
• 16K Bytes Boot Block with Lockout
• Fast Chip Erase Cycle Time 10 seconds
• Byte-by-byte Programming 30 µs/Byte Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation
   25 mA Active Current
   50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
• Small Packaging
   8 x 14 mm VSOP/TSOP



Pinout

  Connection Diagram


Specifications

Temperature under Bias ............................... -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ..................................-0.6V to + 13.5V



Description

The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288 words of 8-bits each. Manufactured with Atmel's advanced nonvolatile CMOS technology, the devices offer access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 50 µA.

AT49BV040-90TC contains a user-enabled  "boot block"  protection feature. The AT49BV/LV040 locates the boot block at lowest order addresses ("bottom boot"). To allow for simple in-system reprogrammability, the AT49BV/LV040 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of AT49BV040-90TC is similar to reading from an EPROM. Reprogramming the AT49BV/LV040 is performed by erasing the entire four megabits of memory and then programming on a byte-by-byte basis. The typical byte programming time is a fast 30 µs. The end of a program cycle of AT49BV040-90TC can be optionally detected by the Data Polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles of AT49BV040-90TC is in excess of 10,000 cycles.

The optional 16K bytes boot block section includes a reprogramming write lockout feature to provide data integrity. The boot sector is designed to contain user-secure code, and when the feature of AT49BV040-90TC is enabled, the boot sector is permanently protected from being reprogrammed.




Parameters:

Technical/Catalog InformationAT49BV040-90TC
VendorAtmel
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH
Memory Size4M (512K x 8)
Speed90ns
InterfaceParallel
Package / Case32-TSOP
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature0°C ~ 70°C
Format - MemoryFLASH
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names AT49BV040 90TC
AT49BV04090TC



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