AT49BV008

Features:

• Single Supply for Read and Write: 2.7V to 3.6V (BV), 3.0V  to 3.6V (LV)
• Fast Read Access Time - 110 ns
• Internal Program Control and Timer
• 16K bytes Boot Block With Lockout
• Fast Erase Cycle Time - 10 seconds
• Byte-By-Byte Programming - 30 µ µ µ µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
  25 mA Active Current
  50 µ µ µ µA CMOS Standby Current
• Typical 10,000 Write Cycles


Pinout




Specifications

Temperature Under Bias	-55°C to +125°C
Storage Temperature	-65°C to +150°C
All Input Voltages(including NC Pins) with Respect to Ground	-0.6V to +6.25V
All Output Voltages with Respect to Ground	-0.6V to VCC + 0.6V
Voltage on OE with Respect to Ground	-0.6V to +13.5V

Description

The AT49BV/LV008 is a 3-volt-only in-system Flash Memory device. Its 8 megabits of memory is organized as 1,024,576 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 110 ns with power dissipation of just 90 mW over the commercial temperature range.  When AT49BV008 is deselected, the CMOS standby current is less than 50 µA.