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AT49BV004

Features: 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program ControlSector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Words (8K bytes) Parameter Blocks One 240K Words (480K bytes) Main Memory Array BlockFast Sector Erase T...

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SeekIC No. : 004290203 Detail

AT49BV004: Features: 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program ControlSector Architecture One 8K Words (16K bytes) Boot Block with Programming Lockout Two 4K Word...

AT49BV004 Data Sheet

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Part Number:
AT49BV004
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 2.7V to 3.6V Read/Write Operation
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
    One 8K Words (16K bytes) Boot Block with Programming Lockout
     Two 4K Words (8K bytes) Parameter Blocks
     One 240K Words (480K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Byte-by-Byte or Word-By-Word Programming - 30 s Typical
Hardware Data Protection
DATA Polling For End Of Program Detection
Low-Power Dissipation
    25 mA Active Current
    50 A CMOS Standby Current
Typical 10,000 Write Cycles


Pinout

Connection Diagram


Specifications

Temperature Under Bias................................. -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground.......................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground................................-0.6V to V CC + 0.6V

Voltage on RESET
with Respect to Ground.......................................-0.6V to +13.5V


Description

The AT49BV004(T) and AT49BV4096A(T) are 3-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufac- tured with Atmel's advanced nonvolatile CMOS technology,AT49BV004 offer access times to 120 ns with power dissipation of just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than 50 A.

The device contains a user-enabled "boot block" protection feature. Two versions of the feature are available: the AT49BV004/4096A locates the boot block at lowest order addresses ("bottom boot"); the AT49BV004T/4096AT locates it at highest order addresses ("top boot").

To allow for simple in-system reprogrammability, the AT49BV004(T)/4096A(T) does not require high input voltages for programming. Reading data out of the device is similar to reading from an EPROM; it has standard CE ,OE , and WE inputs to avoid bus contention. Reprogramming the AT49BV004(T)/4096A(T) is performed by first erasing a block of data and then programming on a byte-by-byte or word-by-word basis.




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