Features: Single Supply for Read and Write: 2.7 to 3.6V
• Fast Read Access Time 70 ns
• Internal Program Control and Timer
• Sector Architecture
One 16K Bytes Boot Block with Programming Lockout
Two 8K Bytes Parameter Blocks
Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)
• Fast Erase Cycle Time 4 Seconds
• Byte-by-Byte Programming 30 s/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
15 mA Active Current
50 A CMOS Standby Current
• Typical 10,000 Write Cycles
• Green (Pb/Halide-free) Packaging OptionSpecificationsTemperature Under Bias................................ -55°C to +125°C
Storage Temperature ..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
DescriptionThe AT49BV002A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory. AT49BV002ANT 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 54 mW over the industrial temperature range. When the device is deselected, the CMOS standby current of AT49BV002ANT is less than 50 A. For the AT49BV002AN(T) pin 1 for PLCC package and pin 9 for the TSOP package are no connect pins. To allow for simpl e in-system reprogrammabil i t y , the AT49BV002A(N)(T) does not require high input voltages for programming. Five-voltonly commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM; AT49BV002ANT has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV002A(N)(T) is performed by erasing a block of data and then programming on a byte by byte basis. The byte programming time is a fast 30 s. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
AT49BV002ANT is erased by executing the erase command sequence; the device internally controls the erase operations. There are two 8K byte parameter block sections, four main memory blocks, and one boot block.
AT49BV002ANT has the capability to protect the data in the boot block; this feature is enabled by a command sequence. The 16K-byte boot block section includes a reprogramming ock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is protected from being reprogrammed.
In the AT49BV002AN(T), once the boot block programming lockout feature is enabled, the contents of the boot block are permanent and cannot be changed. In the AT49BV002A(T), once the boot block programming lockout feature of AT49BV002ANT is enabled, the contents of the boot block cannot be changed with input voltage levels of 5.5 volts or less.
AT49BV002ANT Data Sheet
