AT49BV001T

Features: • Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)• Fast Read Access Time - 70 ns • Internal Program Control and Timer • Sector Architecture One 16K Byte Boot Block with Programming Lockout Two 8K Byte Parameter Blocks Two Main Memory Blocks...

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AT49BV001T Picture
SeekIC No. : 004290192 Detail

AT49BV001T: Features: • Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)• Fast Read Access Time - 70 ns • Internal Program Control and Timer • Sector Architecture On...

floor Price/Ceiling Price

Part Number:
AT49BV001T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• Sector Architecture
   One 16K Byte Boot Block with Programming Lockout
   Two 8K Byte Parameter Blocks
   Two Main Memory Blocks (32K, 64K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µ µ µ µs/Byte Typical
• Hardware Data Protection
• DATA Polling For End Of Program Detection
• Low Power Dissipation
   25 mA Active Current
   50 µ µ µ µA CMOS Standby Current
• Typical 10,000 Write Cycles



Pinout

  Connection Diagram


Specifications

Temperature Under Bias............................... -55°C to +125°C
Storage Temperature ................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V



Description

The AT49BV/LV001(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. AT49BV001T 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 90 mW over the commercial temperature range. When the device is deselected, the CMOS standby current of AT49BV001T is less than 50 µA. For the AT49BV/LV001NT pin 1 for the DIP and PLCC packages and pin 9 for the TSOP package are don't connect pins.

To allow for simple in-system reprogrammability, the AT49BV/LV001(N)(T) does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of AT49BV001T is similar to reading from an EPROM;AT49BV001T has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV/LV001(N)(T) is performed by erasing a block of data and then programming on a byte by byte basis. The byte programming time is a fast 50 µs. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.

AT49BV001T is erased by executing the erase command sequence; the device internally controls the erase operations. There are two 8K byte parameter block sections and two main memory blocks.

AT49BV001T has the capability to protect the data in the boot block; this feature is enabled by a command sequence. The 16K byte boot block section includes a reprogramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector of AT49BV001T is protected from being reprogrammed.

In the AT49BV/LV001N(T), once the boot block programming lockout feature is enabled, the contents of the boot block are permanent and cannot be changed. In the AT49BV/LV001(T), once the boot block programming lockout feature of AT49BV001T is enabled, the contents of the boot block cannot be changed with input voltage levels of 5.5 volts or less.




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