AT49BV001AT

Features: • Single Supply for Read and Write: 2.7 to 3.6V• Fast Read Access Time 55 ns• Internal Program Control and Timer• Sector Architecture One 16K Bytes Boot Block with Programming Lockout Two 8K Bytes Parameter Blocks Two Main Memory Blocks (32K Bytes, 64K Bytes)&...

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SeekIC No. : 004290189 Detail

AT49BV001AT: Features: • Single Supply for Read and Write: 2.7 to 3.6V• Fast Read Access Time 55 ns• Internal Program Control and Timer• Sector Architecture One 16K Bytes Boot Block wit...

floor Price/Ceiling Price

Part Number:
AT49BV001AT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Single Supply for Read and Write: 2.7 to 3.6V
• Fast Read Access Time 55 ns
• Internal Program Control and Timer
• Sector Architecture
   One 16K Bytes Boot Block with Programming Lockout
   Two 8K Bytes Parameter Blocks
   Two Main Memory Blocks (32K Bytes, 64K Bytes)
• Fast Erase Cycle Time 3 Seconds
• Byte-by-Byte Programming 30 s/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
   15 mA Active Current
   50 A CMOS Standby Current
• Typical 10,000 Write Cycles



Pinout

  Connection Diagram


Specifications

  Connection Diagram


Description

The AT49BV001A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 55 ns with power dissipation of just 54 mW over the industrial temperature range.
When AT49BV001AT is deselected, the CMOS standby current is less than 50 A. For the AT49BV001AN(T), pin 1 for the PLCC package and pin 9 for the TSOP package are no connect pins. To allow for simple in-system reprogrammability, the AT49BV001A(N)(T) does not require high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM; AT49BV001AT has standard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV001A(N)(T) is performed by erasing a block of data and then programming on a byte by byte basis. The byte programming time of AT49BV001AT is a fast 30 s. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program
and erase cycles is in excess of 10,000 cycles.
AT49BV001AT is erased by executing the erase command sequence; the device internally controls the erase operations. There are two 8K byte parameter block sections, two main memory blocks, and one boot block.
The device has the capability to protect the data in the boot block; this feature is enabled by a command sequence. The 16K-byte boot block section includes a reprogramming lock out feature to provide data integrity. The boot sector is designed to contain user secure code, and when the feature is enabled, the boot sector is protected from being reprogrammed.
In the AT49BV001AN(T), once the boot block programming lockout feature is enabled, the contents of the boot block are permanent and cannot be changed. In the AT49BV001A(T),once the boot block programming lockout feature is enabled, the contents of the boot block cannot be changed with input voltage levels of 5.5 volts or less.




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