AT45DB1282

Features:

• Single 2.7V - 3.6V Supply
• Dual-interface Architecture
   RapidS™ Serial Interface: 40 MHz Maximum Clock Frequency (SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz)
   Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency
• Page Program Operation
   Dedicated Intelligent Programming Operation
   16,384 Pages (1,056 Bytes/Page) Main Memory
• Automated Page and Block Erase Operations
• Two 1056-byte SRAM Data Buffers Allows Receiving of Data while Reprogramming the Flash Array
• Continuous Read Capability through Entire Array
   Ideal for Code Shadowing Applications
• Low-power Dissipation
   10 mA Active Read Current Typical Serial Interface
   12 mA Active Read Current Typical 8-bit Interface
   5 µA CMOS Standby Current Typical
• Hardware Data Protection
• Security: 128-byte Security Register
   64-byte User Programmable Space
   Unique 64-byte Device Identifier
• 100,000 Program/Erase Cycles Per Page Typical
• Data Retention 10 Years
• Commercial and Industrial Temperature Ranges



Pinout




Specifications

Operating Temperature................ -55°C to +125°C Storage Temperature .................. -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground .....................-0.6V to +6.25V All Output Voltages with Respect to Ground ...............-0.6V to VCC + 0.6V

Description

The AT45DB1282 is a 2.7-volt, dual-interface sequential access Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storageapplications. This device utilizes Atmel's e-STAC™ Multi-Level Cell (MLC) memory technology, which allows a single cell to store two bits of information delivering a very cost effective high density Flash memory. The AT45DB1282 supports RapidS serial interface and Rapid8 8-bit interface. RapidS serial interface is SPI compatible for frequencies up to 33 MHz. The dual-interface allows a dedicated serial interface to be connected to a DSP and a dedicated 8-bit interface to be connected to a microcontroller or vice ver-sa. However, the use of either interface is purely optional. Its 138,412,032 bits of memory are organized as 16,384 pages of 1,056 bytes each. In addition to the 132- megabit main memory, the AT45DB1282 also contains two SRAM buffers of 1,056 bytes each. The buffers allow the receiving of data while a page in the main Memory is being re-programmed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modifywrite operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses either a RapidS serial
interface or a 8-bit Rapid8 interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. AT45DB1282 is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential. AT45DB1282 operates at clock frequencies up to 40 MHz with a typical active read current consumption of 10 mA.

To allow for simple in-system reprogrammability, the AT45DB1282 does not require high input voltages for prog-ramming. AT45DB1282 operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB1282 is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK), or an 8-bit interface consisting of the input/output pins (I/O7 - I/O0) and the clock pin (CLK). All programming and erase cycles are self-timed.