AT45DB021

Features: • Single 2.7V - 3.6V Supply• Serial Interface Architecture• Page Program Operation Single Cycle Reprogram (Erase and Program) 1024 Pages (264 Bytes/Page) Main Memory• Two 264-Byte SRAM Data Buffers Allows Receiving of Data while Reprogramming of Non-Volatile Me...

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AT45DB021 Picture
SeekIC No. : 004290139 Detail

AT45DB021: Features: • Single 2.7V - 3.6V Supply• Serial Interface Architecture• Page Program Operation Single Cycle Reprogram (Erase and Program) 1024 Pages (264 Bytes/Page) Main Memory...

floor Price/Ceiling Price

Part Number:
AT45DB021
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

• Single 2.7V - 3.6V Supply
• Serial Interface Architecture
• Page Program Operation
   Single Cycle Reprogram (Erase and Program)
   1024 Pages (264 Bytes/Page) Main Memory
• Two 264-Byte SRAM Data Buffers Allows Receiving of Data while Reprogramming of Non-Volatile Memory
• Internal Program and Control Timer
• Fast Page Program Time 7 ms Typical
• 120 ms Typical Page to Buffer Transfer Time
• Low Power Dissipation
  4 mA Active Read Current Typical
  5 mA CMOS Standby Current Typical
• 5 MHz Max Clock Frequency
• Hardware Data Protection Feature
• Serial Peripheral Interface (SPI) Compatible Modes 0 and 3
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges



Pinout

  Connection Diagram  Connection Diagram


Specifications

Temperature under Bias .................. -55°C to +125°C

Storage Temperature ...................... -65°C to +150°C

All Input Voltages
(including NC Pins)
with Respect to Ground ........................-0.6V to +6.25V

All Output Voltages
with Respect to Ground ..................-0.6V to VCC + 0.6V





Description

 The AT45DB021 is a 2.7-volt only, serial interface Flash memory suitable for in-system reprogramming. Its 2,162,688 bits of memory are organized as 1024 pages of 264-bytes each. In addition to the main memory, the AT45DB021 also contains two SRAM data buffers of 264-bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a serial interface to sequentially access its data. The simple serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size and active pin count. AT45DB021 is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage, and low power are essential. Typical applications for the DataFlash are digital voice storage, image storage, and data storage. AT45DB021 operates at clock frequencies up to 5 MHz with a typical active read current consumption of 4 mA.

To allow for simple in-system reprogrammability, the AT45DB021 does not require high input voltages for program-ming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB021 is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming cycles are self-timed, and no separate erase cycle is required before programming.


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