AT45D081A

• 100% Compatible to AT45D081
• Single 4.5V - 5.5V Supply
• Serial Interface Architecture
• Page Program Operation Single Cycle Reprogram (Erase and Program) 4096 Pages (264 Bytes/Page) Main Memory
• Optional Page and Block Erase Operations
• Two 264-byte SRAM Data Buffers Allows Receiving of Data while Reprogramming of Nonvolatile Memory
• Continuous Read Capability through Entire Array
• Internal Program and Control Timer
• Low Power Dissipation 15 mA Active Read Current Typical 10 A CMOS Standby Current Typical
• 15 MHz Max Clock Frequency
• Hardware Data Protection Feature
• Serial Peripheral Interface (SPI) Compatible Modes 0 and 3
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges

Temperature under Bias ................................ -55°C to +125°
CStorage Temperature ............................. -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ..................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground ............................-0.6V to V_CC + 0.6V
 *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The AT45D081A is a 5-volt only, serial interface Flash memory suitable for in-system reprogramming. Its 8,650,752 bits of memory are organized as 4096 pages of 264 bytes each. In addition to the main memory, the AT45D081A also contains two SRAM data buffers of 264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Unlike conventional Flash