Features: • Single Supply Voltage, Range 3V to 3.6V• 3-volt Only Read and Write Operation• Software Protected Programming• Low-power Dissipation 15mAActiveCurrent 40 µA CMOS Standby Current• Fast Read Access Time 120 ns• Sector Program Operation Single-cy...
AT29LV512: Features: • Single Supply Voltage, Range 3V to 3.6V• 3-volt Only Read and Write Operation• Software Protected Programming• Low-power Dissipation 15mAActiveCurrent 40 µA...
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Features: • Single Supply Voltage, Range 2.7V to 3.6V• Single Supply for Read and Writ...
• Single Supply Voltage, Range 3V to 3.6V
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Low-power Dissipation 15mAActiveCurrent 40 µA CMOS Standby Current
• Fast Read Access Time 120 ns
• Sector Program Operation Single-cycle Reprogram (Erase and Program) 512 Sectors (128 Bytes/Sector) Internal Address and Data Latches for 128 Bytes
• Fast Sector Program Cycle Time 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-onlymemory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-ufactured with Atmel's advanced nonvolatile CMOS technology, the device offersaccess times to 120 ns with power dissipation of just 54 mW over the commercial tem-perature range. When the AT29LV512 is deselected, the CMOS standby current is lessthan 40 µA. The device endurance is such that any sector can typically be written to inexcess of 10,000 times.