AT29LV010A

Temperature Under Bias................... -55 to +125
Storage Temperature........................ -65to +150
All Input Voltages (including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground ..............-0.6V to V_CC + 0.6V
Voltage on A9 (including NC Pins)
with Respect to Ground ................... -0.6V to +13.5V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The AT29LV010A is a 3-volt-only in-system Flash programmable and erasable read only memory (Flash). Its 1 megabit of memory is organized as 131,072 bytes by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 54 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 20 mA. The device endurance is such that any sector can typically be written to in excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29LV010A does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29LV010A is performed on a sector basis; 128-bytes of data are loaded into the device and then simultaneously programmed.