AT29C432

Features:

· ConcurrentFlash™ Memory
    Unique Architecture Allows the Flash Array To Be Read During the E²PROM Write Cycle
· 4 Megabit 5-volt Flash
    Configured as a 512K x 8 Memory Array
    120 ns Read Access Time
    Sector Program Operation
        Single Cycle Reprogram (No Erase Necessary)
        2048 Sectors, 256-Bytes Wide
        10 ms Sector Rewrite
    JEDEC Standard Software Data Protection
· 256K bit Full Feature E²PROM
    Configured as a 32K x 8 Memory Array
    Byte or Page (16 bytes) Write Capability
    Write Cycle Time: 10 ms
    JEDEC Standard Software Data Protection
· Pinout Similar to 32-Pin 4 Mb Flash
· Data Memory Endurance: 10,000 cycles


Pinout




Specifications

Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground ................... -0.6V to +13.5V

*NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.


Description

The AT29C432 is a CMOS memory specifically designed for applications requiring both a high density nonvolatile program memory and a smaller nonvolatile data memory. The AT29C432 provides this in the form of a 4 megabit Flash array integrated with a 256K bit full featured E²PROM array on the same device. A unique feature of this device is its concurrent read while writing capability. This provides the host system read access to the Flash program memory during the write cycle time of the E2PROM.

The two memory arrays share all I/O lines, Address lines and OE and WE inputs. Each memory array has its own Chip Enable input: CEF for the Flash array and CEE for the E2PROM array.

Additionally, Software Data Protection has been independently implemented for both arrays and is always enabled. The AT29C432 has a pinout similar to the AT29C040A Flash memory. A system designer using a Flash memory for program storage and another smaller, non volatile memory for data storage can easily replace both memories with the AT29C432.