AT29C256

Features:

• Fast Read Access Time 70 ns
• 5-volt Only Reprogramming
• Page Program Operation
      Single Cycle Reprogram (Erase and Program)
      Internal Address and Data Latches for 64 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Program Cycle Times
      Page (64 Byte) Program Time 10 ms
      Chip Erase Time 10 ms
• DATA Polling for End of Program Detection
• Low-power Dissipation
      50 mA Active Current
      300 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges


Pinout




Specifications

Temperature Under Bias................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ......................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground ................................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground .......................................-0.6V to +13.5V


Description

The AT29C256 is a five-volt-only in-system Flash programmable and erasable read only memory (PEROM). AT29C256 256K of memory is organized as 32,768 words by 8 bits.Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW. When the device is deselected, the CMOS standby current is less than 300 µA. AT29C256 endurance is such that any sector can typically be written to in excess of 10,000 times.